ft2000aa ... ft2000kg ft2000aa ... ft2000kg superfast silicon rectifiers C single diode / two polarities superschnelle silizium-gleichrichter C einzeldiode / zwei polarit?ten version 2013-05-07 dimensions - ma?e [mm] nominal current nennstrom 20 a repetitive peak reverse voltage periodische spitzensperrspannung 50...400 v plastic case kunststoffgeh?use to-220ac weight approx. gewicht ca. 1.8 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging in tubes standard lieferform in stangen maximum ratings and characteristics grenz- und kennwerte type / typ polarity / polarit?t repet. peak reverse voltage period. spitzensperrspanng. v rrm [v] surge peak reverse volt. sto?spitzensperrspanng. v rsm [v] forward voltage durchlass-spannung v f [v] 1 ) k (standard) a (reverse) i f = 5 a i f = 20 a ft2000ka ft2000aa 50 50 < 0.84 < 0.96 ft2000kb ft2000ab 100 100 < 0.84 < 0.96 ft2000kc ft2000ac 150 150 < 0.84 < 0.96 ft2000kd ft2000ad 200 200 < 0.84 < 0.96 ft2000kg ft2000ag 400 400 < 0.84 < 0.96 max. average forward rectified current, r-load dauergrenzstrom in einwegschaltung mit r-last t c = 100c i fav 20 a repetitive peak forward current periodischer spitzenstrom f > 15 hz i frm 70 a 2 ) peak forward surge current, 50/60 hz half sine-wave sto?strom fr eine 50/60 hz sinus-halbwelle t a = 25c i fsm 350/385 a rating for fusing, t < 10 ms grenzlastintegral, t < 10 ms t a = 25c i 2 t 612 a 2 s junction temperature C sperrschichttemperatur in dc forward mode C bei gleichstrom-durchlassbetrieb t j t j -50...+150c +200c storage temperature C lagerungstemperatur t s -50...+175c 1 t j = 25c 2 max. temperature of the case t c = 100c C max. temperatur des geh?uses t c = 100c ? diotec semiconductor ag http://www.diotec.com/ 1 4 3 1 4 3 1 a k 4 3 1 type typ 5.08 0.1 0.8 0.2 1.3 0.1 10.1 0.3 3 . 9 0 . 3 2 . 8 0 . 3 1 3 . 9 0 . 3 1 4 . 9 0 . 7 ? 0.2 3.8 1.2 0.2 0.42 0.1 4.5 0.2 2.67 0.2 8 . 7 0 . 3
ft2000aa ... ft2000kg characteristics kennwerte leakage current sperrstrom t j = 25c t j = 125c v r = v rrm i r < 5 a typ. 40a reverse recovery time sperrverzug i f = 0.5 a through/ber i r = 1 a to i r = 0.25 a t rr < 200 ns thermal resistance junction to case w?rme widerstand sperrschicht C geh?use r thc < 1.5 k/w 2 http://www.diotec.com/ ? diotec semiconductor ag 120 100 80 60 40 20 0 [%] i fav rated forward current vs. temp. of the case in abh. v. d. temp. des geh?uses zul. richtstrom [c] t c 150 100 50 0 forward characteristics (typical values) durchlasskennlinien (typische werte) 10 10 10 1 10 3 2 -1 [a] i f 0.4 v f 0.8 1.0 1.2 1.4 [v] 1.8 t = 25c j t = 125c j 400a-(5a-0,8v)
|
